FDG313N fet equivalent, n-channel digital fet.
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0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
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Low gate charge (1.64 nC typical) Very low level gate drive r.
as a replacement for bipolar digital transistor and small signal MOSFET.
Features
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0.95 A, 25 V. RDS(on) = 0.45 Ω .
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe.
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